Data Sheet Bd139

Data Sheet Bd139. PDF file BD139 45 60 80 V V V VCEO CollectorEmitter Voltage BD135 BD137 BD139 45 60 80 V V V VEBO EmitterBase Voltage 5 V IC Collector Current (DC) 15 A ICP Collector Current (Pulse) 30 A IB Base Current 05 A PC Collector Dissipation (TC=25°C) 125 W PC Collector Dissipation (Ta=25°C) 125 W TJ Junction Temperature 150 °C.

PDF filebd139 tj = 125°c dc 5 ms 05 ms 01 ms figure 7 power derating ta ambient temperature (°c) 0 20 100 160 0 050 100 150 p d power dissipation (w) 025 075 125 40 60 80 120 140 to−225 case 77−09 issue ad date 25 mar 2015 style 1 pin 1 emitter 2 4 collector 3 base style 6 pin 1 cathode 2 4 gate 3 anode style 2 pin 1 cathode 2 4 anode 3 gate style 3 pin 1 base 2.

BD139 Datasheet(PDF) Fairchild Semiconductor

PDF fileDATA SHEET Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 DISCRETE SEMICONDUCTORS BD135 BD137 BD139 NPN power transistors book halfpage M3D100 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistors BD135 BD137 BD139 FEATURES •High current (max 15 A) •Low voltage (max 80 V) APPLICATIONS •Driver.

BD139 Datasheet, Equivalent, Cross Reference Search

BD139 NPN Power Transistor – Datasheet 9 months ago by Wajid Hussain 1503 views The BD139 is silicon Epitaxial Planar NPN transistors mounted in Jedec SOT32 plastic package designed for audio amplifiers and drivers utilizing complementary or quasi complementary circuits Power Transistor? Transistors are threeterminal semiconductor.

BD139 Datasheet(PDF) NXP Semiconductors

BD139 Transistor Overview BD139 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin BD139 has a gain value of 40 to 160 this value determines the amplification capacity of the transistor.